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application/pdfIEEEIEEE Journal of the Electron Devices Society;2020;8; ;10.1109/JEDS.2019.2958915AlGaN/GaNAlN/GaNTCADHEMTdevice simulationRF HEMTdevice designnon-linearityComputational Modelling-Based Device Design for Improved mmWave Performance and Linearity of GaN HEMTsAnkit SoniMayank Shrivastava
IEEE Journal of the Electron Devices Society33 2020810.1109/JEDS.2019.295891541
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